MRF8P9300HR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF8P9300HR6_10 Datasheet - Page 11

• Manufacturer Part Number: MRF8P9300HR6_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Figure 14. Output Peak- -to- -Average Ratio Compression (PARC)
21.5
20.5
19.5
18.5
17.5
22
21
20
19
18
17
Figure 15. Single- -Carrier W- -CDMA Power Gain, Drain
22
21
20
19
18
17
16
24
20
16
12
8
4
0
TYPICAL CHARACTERISTICS — 865- -895 MHz
820
620
Broadband Performance @ P
1
V
I
IRL
DQ
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
G
DD
V
3.84 MHz Channel Bandwidth
Figure 16. Broadband Frequency Response
ps
DD
Efficiency and ACPR versus Output Power
= 2400 mA, Single--Carrier W--CDMA
= 28 Vdc, P
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
865 MHz
840
= 28 Vdc, I
690
860
880 MHz
P
760
out
out
DQ
ACPR
, OUTPUT POWER (WATTS) AVG.
= 100 W (Avg.)
= 2400 mA, Single--Carrier W--CDMA
f, FREQUENCY (MHz)
880
f, FREQUENCY (MHz)
830
10
Gain
ACPR
895 MHz
900
900
IRL
920
out
970
= 100 Watts Avg.
V
P
I
DQ
DD
in
865 MHz
940
1040
= 0 dBm
= 2400 mA
= 28 Vdc
880 MHz
PARC
100
G
ps
960
895 MHz
1110
η
η
D
D
980
300
1180
44
41
38
35
32
--30
--32
--34
--36
--38
--40
60
50
40
30
20
10
0
0
--4
--8
--12
--16
--20
--24
MRF8P9300HR6 MRF8P9300HSR6
0
--10
--20
--30
--40
--50
--60
0
--5
--10
--15
--20
--25
--0.5
--1
--1.5
--2
--2.5
--3
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