MRF8P9300HR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF8P9300HR6_10 Datasheet - Page 17

• Manufacturer Part Number: MRF8P9300HR6_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
1.1
0
1
Nov. 2009
May 2010
July 2010
Date
• Initial Release of Data Sheet
• Changed ESD Human Body Model rating from Class 1C to Class 2 to reflect recent ESD test results of the
• Added Alternate Characterization for 865--895 MHz Frequency Band as follows:
• Changed 850 MHz to 880 MHz in the Typical Broadband Performance table for the 865--895 MHz frequency
• Added connection pad identifiers to Fig. 2, Test Circuit Component Layout, p. 4
device, p. 2
-- Typical Performance bullet, p. 1
-- Typical Broadband Performance table, p. 3
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 10
-- Fig. 14, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ P
-- Fig. 15, Single--Carrier W--CDMA Power Gain, Drain, Efficiency and ACPR versus Output Power, p. 11
-- Fig. 16, Broadband Frequency Response, p. 11
-- Fig. 17, Series Equivalent Source and Load Impedance, p. 12
band, p. 3
Avg., p. 11
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
Description
MRF8P9300HR6 MRF8P9300HSR6
out
= 100 Watts
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