MRF8P9300HR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF8P9300HR6_10 Datasheet - Page 6

• Manufacturer Part Number: MRF8P9300HR6_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF8P9300HR6 MRF8P9300HSR6
21
20
19
18
17
16
15
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC)
--10
--20
--30
--40
--50
--60
20
19
18
17
16
15
14
--1
--2
--3
--4
--5
1
0
820
45
Broadband Performance @ P
1
Figure 5. Intermodulation Distortion Products
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM7--L
IRL
η
Compression (PARC) versus Output Power
DD
D
Figure 6. Output Peak- -to- -Average Ratio
840
= 28 Vdc, P
65
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
DD
IM7--U
TYPICAL CHARACTERISTICS
ACPR
IM5--U
= 28 Vdc, I
860
IM5--L
versus Two- -Tone Spacing
85
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
P
out
PARC
--1 dB = 80.0 W
TWO--TONE SPACING (MHz)
out
DD
= 310 W (PEP), I
, OUTPUT POWER (WATTS)
--2 dB = 110.0 W
= 28 Vdc, P
f, FREQUENCY (MHz)
880
105
DQ
IM3--L
IM3--U
= 2400 mA, f = 940 MHz
G
ps
900
125
10
out
= 100 W (Avg.), I
DQ
--3 dB = 155.2 W
out
= 2400 mA
920
145
= 100 Watts Avg.
940
165
DQ
= 2400 mA
185
960
ACPR
G
PARC
η
ps
D
980
205
100
50
40
30
20
--30
--35
60
50
40
30
20
10
0
--40
--20
--25
--30
--35
--40
--45
--50
0
--10
--20
--30
Freescale Semiconductor
--1
--2
--3
RF Device Data
0