MRF8P9300HR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF8P9300HR6_10 Datasheet - Page 9

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MRF8P9300HR6_10

Manufacturer Part Number
MRF8P9300HR6_10
Description
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
58
57
56
55
54
53
52
51
50
49
48
47
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Measurement made on a per side basis.
V
27
DD
= 28 Vdc, I
(MHz)
28
920
940
960
Figure 12. Pulsed CW Output Power
f
(MHz)
920
940
960
29
versus Input Power @ 28 V
Test Impedances per Compression Level
f
DQ
= 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
30
P1dB
P1dB
P1dB
P
in
, INPUT POWER (dBm)
31
f = 920 MHz
32
1.58 -- j2.40
1.77 -- j3.02
1.98 -- j3.46
Z
source
Watts
33
229
214
219
34
f = 960 MHz
P1dB
35
0.84 -- j1.69
0.76 -- j1.90
0.75 -- j1.51
f = 940 MHz
Z
dBm
36
53.6
53.3
53.4
load
Actual
Ideal
37
MRF8P9300HR6 MRF8P9300HSR6
38
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