buk856-400 NXP Semiconductors, buk856-400 Datasheet - Page 3

• Manufacturer Part Number: buk856-400
• Description: Buk856-400 Iz Insulated Gate Bipolar Transistor Protected Logic-level Igbt
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1998
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
V
CEsat
1E+01
1E+00
1E-01
1E-02
1E-03
0.1
10
1E-07
= f(I
1
Fig.1. Transient thermal impedance
3
2
1
0
Fig.2. Turn-off Safe Operating Area
0
Zth(j-mb) / (K/W)
0
conditions: T
IC / A
Fig.3. Typical On-state Voltage
VCE / V
Z
0.05
0.02
C
Tj / C =
D=
0.5
0.2
0.1
th j-mb
); parameter T
0
4
1E-05
150
= f(t) ; parameter D = t
-40
25
Self-clamped
200
8
j
VCE / V
12
T
IC / A
1E-03
j
jmax.
; conditions: V
t / s
I
CLM
P
D
16
; R
400
G
t
BUK8Y6-400IZ
p
T
1E-01
20
1 k
PMG35A
p
D =
/T
24
GE
t
T
p
t
600
= 3.5 V
1E+01
3
V
CEsat
120
110
100
Fig.5. Derating of I
90
80
70
60
50
40
30
20
10
0
1.5
0.5
Fig.4. Normalised power dissipation.
15
10
0
0
2
1
0
= f(I
5
PD%
conditions: V
0
Fig.6. Typical On-state Voltage
0
ICLM / A
VCE / V
PD% = 100.P
Tj / C =
C
20
); parameter T
4
50
150
-40
25
40
8
dVCE/dt (V/us)
CE
60
CLM
100
D
Tmb / C
12
IC / A
/P
500 V; T
j
with turn-off dV
; conditions: V
D 25˚C
80
Normalised Power Derating
16
BUK856-400 IZ
150
Product specification
= f(T
100
BUK8Y6-400IZ
j
20
mb
T
120
PMG35A
jmax.
200
)
24
GE
CE
Rev. 1.400
140
= 5 V
/dt