buk856-400 NXP Semiconductors, buk856-400 Datasheet - Page 6

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buk856-400

Manufacturer Part Number
buk856-400
Description
Buk856-400 Iz Insulated Gate Bipolar Transistor Protected Logic-level Igbt
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
November 1998
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
Fig.20. Test circuit for inductive load switching times .
Fig.21. Definitions of inductive load switching times .
conditions: T
VGE
90%
10%
90%
10%
t p
150
100
Fig.19. Typical Turn-off dV
50
0
: adjust for correct Ic
0
dVce/dt (V/us)
V
GE
I
j
C
=125 ˚C; I
td(off)
1
R
G
C
2
Rg / kOhm
=8 A; V
tc
tf
Lc
3
CL
IC measure
Vcc
D.U.T.
0R1
=300 V; L
CE
/dt vs. R
V
4
CE
PMG35A
C
t
t
=5 mH.
G
5
V
0V
CL
6
Fig.23. Test circuit for clamped turn-off energy test
t p
Fig.24. Definition of clamping energy E
V
P
GE
V
V
: adjust for correct Ic
I
35
30
25
20
Fig.22. Reverse Breakdown Voltage
(BR)ECS
-50
V(BR)ECS / V
Vce x Ic
= f(T
Ecer
Vge
0
Vce
j
); conditions: I
R
G
Ic
Tj / degC
min.
typ.
50
Lc
BUK856-400 IZ
IC measure
Vcc
Product specification
BUK856-400IZ
D.U.T.
EC
100
0R1
= 50 mA
t
t
t
V(cl)cer
150
Rev. 1.400
CER
0V

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