buk856-400 NXP Semiconductors, buk856-400 Datasheet - Page 5

• Manufacturer Part Number: buk856-400
• Description: Buk856-400 Iz Insulated Gate Bipolar Transistor Protected Logic-level Igbt
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1998
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
Fig.14. Typical Turn-on Gate Charge Characteristics
Fig.15. Typical Capacitances C
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
C = f(V
10000
Fig.13. Sub-threshold collector current
1000
100
6
5
4
3
2
1
0
10
0
0
IC / A
0.01
VGE / V
V
I
C / pf
C
GE
CE
= f(V
); conditions: V
= f(Q
0.4
0.1
GE
Vcc / V = 12
10
G
); T
); conditions: I
0.8
2 %
j
= 25˚C; V
Qg / nC
1
SUB-THRESHOLD CONDUCTION
VCE / V
VGE / V
1.2
GE
20
typ
10
300
= 0 V; f = 1 MHz
1.6
CE
C
= V
= 8 A.
ies
98 %
100
PMG35A
, C
30
GE
pmg35a
2
oes
Coes
Cres
Cies
1000
, C
2.4
res
5
conditions: T
conditions: T
conditions: I
Fig.16. Typical Switching Characteristics vs. R
Fig.17. Typical Switching Characteristics vs. T
Fig.18. Typical Switching Characteristics vs. I
100
15
10
15
10
10
5
0
5
0
1
0
0
t / us, E / mJ
t / us, E / mJ
0
t / us, E / mJ
td(off)
E(off)
E(off)
td(off)
j
=125 ˚C V
tf
C
tf
j
=125 ˚C; I
=8 A; V
2
1
50
CL
CL
td(off)
=300 V; R
C
4
2
Rg / kOhm
=300 V; R
=8 A; V
IC / A
Tj / C
6
3
BUK856-400 IZ
CL
100
Product specification
G
=300 V; L
=1 k ; L
G
=1 k ; L
8
4
PMG35A
PMG35A
PMG35A
E(off)
tf
150
C
Rev. 1.400
C
10
=5 mH.
=5 mH.
C
5
=5 mH.
C
G
j