buk856-400 NXP Semiconductors, buk856-400 Datasheet - Page 4

• Manufacturer Part Number: buk856-400
• Description: Buk856-400 Iz Insulated Gate Bipolar Transistor Protected Logic-level Igbt
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1998
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
I
I
C
C
g
fe
= f(V
Fig.9. Typical Forward Transconductance
= f(V
Fig.8. Typical Transfer Characteristics
= f(I
30
20
10
30
20
10
35
30
25
20
15
10
Fig.7. Typical Output Characteristics
0
0
5
0
CE
0
GE
0
0
IC / A
IC / A
gfe / S
C
Tj / C =
); parameter V
); parameter T
), parameter T
5
4
150
-40
2
25
1
VGE / V = 4
10
4
VCE / V
VGE / V
IC / A
j;
GE
j
; conditions: V
conditions: V
2
Tj / C =
; conditions: T
6
20
150
-40
25
3
8
PMG35A
PMG35A
PMG35A
CE
CE
2.8
2.6
2.4
2.2
j
= 10 V
3
2
= 25˚C
= 10 V
30
10
4
4
I
Fig.11. Typical collector clamp characteristics
CES
V
I
GES
Fig.10. Typical gate-emitter charcteristics
GE(TO)
1E-2
1E-3
1E-5
1E-6
1E-7
1E-8
1E-9
0.1
= f(V
IE-4
10
2.5
1.5
0.5
1
= f(V
2
1
350
-40 -20
ICES / mA
Fig.12. Gate Threshold Voltage
0
= f(T
Tj / C =
+/- IGES / A
VGE(TO) / V
CE
GE
); parameter T
); conditions: V
j
370
); conditions: I
150
-40
25
0
5
20
390
VCE / V
40
VGE / V
Tj / C
10
min.
max.
typ.
j;
60
conditions: V
410
C
CE
= 1 mA; V
BUK856-400 IZ
80 100 120 140
= 0 V; T
Product specification
BUK856-400IZ
15
430
PMG35A
PMG35A
j
CE
= 25˚C
GE
450
Rev. 1.400
= V
20
= 0 V
GE