k9k8g08u0m-p Samsung Semiconductor, Inc., k9k8g08u0m-p Datasheet - Page 14

• Manufacturer Part Number: k9k8g08u0m-p
• Description: 4g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC Timing Characteristics for Command / Address / Data Input
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
Program / Erase Characteristics
NOTE
1. Typical value is measured at Vcc=3.3V, T
2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25
K9WAG08U1M
K9K8G08U0M K9NBG08U5M
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
Program Time
Dummy Busy Time for Two-Plane Page Program
Number of Partial Program Cycles
Block Erase Time
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Parameter
Parameter
Symbol
t
t
t
t
t
CLS
ALS
ADL
t
t
CS
t
DS
t
t
A
t
t
CLH
ALH
WC
WH
WP
CH
DH
=25°C. Not 100% tested.
(1)
(1)
(1)
(1)
(2)
K9NBG08U5M
25
10
35
10
25
25
10
20
10
45
15
70
Symbol
t
t
t
Min
PROG
Nop
DBSY
BERS
14
K9WAG08U1M
K9K8G08U0M
12
20
12
12
12
25
10
70
5
5
5
5
Min
-
-
-
-
K9NBG08U5M
Typ
200
0.5
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
K9WAG08U1M
K9K8G08U0M
Max
700
1
4
2
-
-
-
-
-
-
-
-
-
-
-
-
°
C temperature
cycles
Unit
ms
µs
µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
.