k9k8g08u0m-p Samsung Semiconductor, Inc., k9k8g08u0m-p Datasheet - Page 15

• Manufacturer Part Number: k9k8g08u0m-p
• Description: 4g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

AC Characteristics for Operation
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5
K9WAG08U1M
K9K8G08U0M K9NBG08U5M
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE High to Output hold
RE Low to Output hold
CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Parameter
Symbol
t
t
t
t
RHOH
t
t
t
t
t
t
RLOH
t
t
t
RHW
WHR
t
t
t
t
COH
REH
CLR
REA
CEA
RHZ
CHZ
RST
t
WB
t
AR
RR
RP
RC
IR
R
K9NBG08U5M
15
100
10
10
20
25
50
15
15
15
60
0
-
-
-
-
-
-
-
Min
K9K8G08U0M
K9WAG08U1
100
10
10
20
12
25
15
15
10
60
5
0
-
-
-
-
-
-
-
µ
s.
K9NBG08U5M
5/10/500
FLASH MEMORY
100
100
20
30
45
30
-
-
-
-
-
-
-
-
(1)
Max
K9K8G08U0M
K9WAG08U1
5/10/500
100
100
20
20
25
30
-
-
-
-
-
-
-
-
-
-
-
-
(1)
Unit
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns