k9k8g08u0m-p Samsung Semiconductor, Inc., k9k8g08u0m-p Datasheet - Page 27

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k9k8g08u0m-p

Manufacturer Part Number
k9k8g08u0m-p
Description
4g X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Input Data Latch Cycle
ALE
CLE
CE
WE
I/Ox
K9WAG08U1M
K9K8G08U0M K9NBG08U5M
CE
RE
R/B
I/Ox
* Serial access Cycle after Read
NOTES : Transition is measured at ± 200mV from steady state voltage with load.
t
RR
t
t
ALS
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
WP
t
DS
DIN 0
t
WC
t
REA
t
DH
t
WH
(CLE=L, WE=H, ALE=L)
Dout
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
27
t
DH
Dout
t
RHZ
t
DIN final
WP
t
DS
t
DH
t
CH
t
CLH
t
REA
FLASH MEMORY
Dout
t
t
RHOH
t
RHZ
t
CHZ
COH

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