k9k8g08u0m-p Samsung Semiconductor, Inc., k9k8g08u0m-p Datasheet - Page 3

• Manufacturer Part Number: k9k8g08u0m-p
• Description: 4g X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

PRODUCT LIST
GENERAL DESCRIPTION
• Voltage Supply
• Organization
• Automatic Program and Erase
• Page Read Operation
• Fast Write Cycle Time
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(K9NBG08U5M:50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0M′s extended
reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9K8G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another
ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
FEATURES
K9WAG08U1M
K9K8G08U0M K9NBG08U5M
- 2.70V ~ 3.60V
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
- Page Size : (2K + 64)Byte
- Random Read : 20µs(Max.)
- Serial Access : 25ns(Min.)
* K9NBG08U5M : 50ns(Min.)
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
K9WAG08U1M-Y,P
K9K8G08U0M-Y,P
K9NBG08U5M-P
K9WAG08U1M-I
Part Number
2.70 ~ 3.60V
Vcc Range
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9WAG08U1M-ICB0/IIB0
- Program/Erase Lockout During Power Transitions
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
- K9K8G08U0M-YCB0/YIB0
- K9K8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
- K9WAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
- K9NBG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE
3
- K9WAG08U1M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
Organization
X8
FLASH MEMORY
TSOP1-DSP
PKG Type
52TLGA
TSOP1