k9k8g08u0m-p Samsung Semiconductor, Inc., k9k8g08u0m-p Datasheet - Page 31

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k9k8g08u0m-p

Manufacturer Part Number
k9k8g08u0m-p
Description
4g X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Page Program Operation
CLE
CE
WE
ALE
RE
R/B
I/Ox
K9WAG08U1M
K9K8G08U0M K9NBG08U5M
Input Command
SerialData
80h
t
WC
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Co.l Add1 Col. Add2
Column Address
Row Add1
t
WC
Row Address
Row Add2 Row Add3
t
ADL
31
1 up to m Byte
Din
N
Serial Input
t
WC
Din
M
Program
Command
10h
t
WB
t
FLASH MEMORY
PROG
Read Status
Command
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
70h
t
WHR
I/O
0

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