blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet - Page 11
blf4g10-120
Manufacturer Part Number
blf4g10-120
Description
Uhf Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BLF4G10-120.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF4G10-120
Manufacturer:
Microsemi
Quantity:
1 400
Part Number:
BLF4G10-120
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
10. Abbreviations
9397 750 14549
Product data sheet
Table 9:
Acronym
ACPR
CDMA
CW
EDGE
ESR
EVM
GSM
I
LDMOS
PEP
RF
SMD
VSWR
Dq
Abbreviations
Description
Adjacent Channel Power Ratio
Code Division Multiple Access
Continuous Wave
Enhanced Data rates for GSM Evolution
Equivalent Series Resistance
Error Vector Magnitude
Global System for Mobile communications
quiescent drain current
Laterally Diffused Metal Oxide Semiconductor
Peak Envelope Power
Radio Frequency
Surface-Mount Device
Voltage Standing-Wave Ratio
Rev. 01 — 10 January 2006
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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