blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet - Page 3

• Manufacturer Part Number: blf4g10-120
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
9397 750 14549
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5:
Table 6:
T
Table 7:
Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz.
V
The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
G
IRL
IMD3
DSS
DSX
GSS
j
DS
fs
DS
D
(BR)DSS
GS(th)
GSq
th(j-case)
DS(on)
rs
p
= 25 C; unless otherwise specified.
= 28 V; I
= 28 V; I
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
feedback capacitance
Parameter
thermal resistance from
junction to case
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
Thermal characteristics
Characteristics
Application information
Dq
Dq
= 850 mA; T
= 850 mA; P
Rev. 01 — 10 January 2006
case
BLF4G10-120; BLF4G10S-120
L
= 25 C; unless otherwise specified.
= 120 W (CW); f = 960 MHz.
Conditions
T
case
P
P
Conditions
P
P
P
P
L
L
L(PEP)
L(PEP)
L(PEP)
L(PEP)
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 60 W
= 120 W
= 80 C
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 6 A
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 15 V; V
= V
= 0 V; V
= 120 W
= 120 W
= 120 W
= 120 W
GS(th)
GS(th)
D
DS
DS
D
D
D
= 0.9 mA
+ 6 V;
+ 6 V;
DS
= 180 mA
= 900 mA
= 10 A
= 28 V
= 28 V;
= 0 V
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
Min
18
-
44
-
Min
65
2.5
2.7
-
27
-
-
-
-
Typ
0.76
0.65
Typ
19
46
8
31
Typ
-
3.1
3.2
-
30
-
9.0
0.09 -
2.5
Max
0.85
0.74
Max
-
-
5
27
Max Unit
-
3.5
3.7
3
-
300
-
-
Unit
K/W
K/W
Unit
dB
dB
%
dBc
3 of 14
V
V
V
A
nA
S
pF
A