blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet - Page 5

• Manufacturer Part Number: blf4g10-120
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14549
Product data sheet
Fig 5. GSM EDGE power gain and drain efficiency as
Fig 7. GSM EDGE rms EVM as a function of average
EVM
(dB)
(%)
G
p
rms
20
19
18
17
4
3
2
1
0
V
f = 960 MHz
functions of average load power; typical values
V
f = 960 MHz
load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
G
p
20
20
Dq
Dq
= 850 mA; T
= 850 mA; T
D
40
40
case
case
= 25 C;
= 25 C;
60
60
P
P
L(AV)
L(AV)
001aac404
001aac406
(W)
(W)
Rev. 01 — 10 January 2006
80
80
60
40
20
0
BLF4G10-120; BLF4G10S-120
(%)
D
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
ACPR
ACPR
(dBc)
(dBc)
55
65
75
85
57
59
61
63
65
V
f = 960 MHz
functions of average load power; typical values
V
f = 960 MHz
functions of drain efficiency; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
20
Dq
Dq
ACPR
20
= 850 mA; T
= 850 mA; T
400
UHF power LDMOS transistor
ACPR
ACPR
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
40
400
600
case
case
40
= 25 C;
= 25 C;
EVM
60
P
rms
D
L(AV)
001aac405
001aac407
( % )
(W)
80
60
4
3
2
1
0
EVM
(%)
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