blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet - Page 8

• Manufacturer Part Number: blf4g10-120
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14549
Product data sheet
Table 8:
[1]
[2]
[3]
[4]
Component Description
C1
C2, C12
C3, C13
C4
C5
C6, C7, C11,
C15
C8
C9
C10
C14
C16
C17
C18
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
R1
R2
R3
American Technical Ceramics type 100B or capacitor of same quality.
Mounted flat.
Low ESR.
Striplines are on a double copper-clad Ultralam 2000 PCB (
List of components (see
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
trimmer capacitors (Tekelec)
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
electrolytic capacitor
ferrite bead (long)
3 turn inductor ID 4.5 mm,
Cu-wire diameter 1 mm
4 turn inductor ID 3 mm,
Cu-wire diameter 1 mm
ferrite bead (short)
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
SMD resistor
SMD resistor
metal film resistor
Rev. 01 — 10 January 2006
BLF4G10-120; BLF4G10S-120
Figure 9
and
[1]
[1]
[1]
[1]
[1]
[2]
[1]
[1]
[1]
[3]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Figure
Value
30 pF
47 pF
300 pF
6.2 pF
7.5 pF
0.8 pF to 8 pF
20 nF
10 F; 35 V
6.8 pF
5.1 pF
56 pF
10 F; 35 V
220 F; 63 V
grade 4S2
grade 4S2
Z
Z
Z
Z
Z
Z
Z
Z
8.2 ; 0.1 W
4.7 ; 0.1 W
10 ; 0.6 W
0
0
0
0
0
0
0
0
= 50
= 50
= 25
= 10
= 10
= 25
= 50
= 50
r
= 2.5); thickness = 31 mils.
10)
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Dimensions
(W
(W
(W
(W
(W
(W
(W
(W
L) 2 mm
L) 2 mm
L) 5.6 mm
L) 16 mm
L) 16 mm
L) 5.6 mm
L) 2 mm
L) 2 mm
17.2 mm
25.4 mm
25.4 mm
17.2 mm
10.2 mm
10.2 mm
17.4 mm
17.4 mm
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