PF38F5070M0Y0T0 NUMONYX [Numonyx B.V], PF38F5070M0Y0T0 Datasheet - Page 9

• Manufacturer Part Number: PF38F5070M0Y0T0
• Description: Numonyx StrataFlash Wireless Memory
• Manufacturer: NUMONYX [Numonyx B.V]

Numonyx™ StrataFlash
2.0
November 2007
Order Number: 313295-04
Functional Overview
The Numonyx™ StrataFlash
provides read-while-write and read-while-erase capability with density upgrades
through 256-Mbit. This device provides high performance at low voltage on a 16-bit
data bus. Individually erasable memory blocks are sized for optimum code and data
storage.
Each device density contains one parameter partition and several main partitions. The
flash memory array is grouped into multiple 8-Mbit partitions for the 64-Mbit and
128-Mbit devices, and into multiple 16-Mbit partitions for the 256-Mbit device. By
dividing the flash memory into partitions, program or erase operations can take place
at the same time as read operations.
Although each partition has write, erase and burst read capabilities, simultaneous
operation is limited to write or erase in one partition while other partitions are in read
mode. The device allows burst reads that cross partition boundaries. User application
code is responsible for ensuring that burst reads don’t cross into a partition that is
programming or erasing.
Upon initial power up or return from reset, the device defaults to asynchronous read
mode. Configuring the Read Configuration Register enables synchronous burst-mode
reads. In synchronous burst mode, output data is synchronized with a user-supplied
clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates
technology that enables fast factory program and erase operations. Designed for low-
voltage systems, it supports read operations with V
operations with V
(Buffered EFP) provides the fastest flash array programming performance with VPP at
9.0 V, which increases factory throughput. With V
together for a simple, ultra low power design. In addition to voltage flexibility, a
dedicated V
V
A Command User Interface (CUI) is the interface between the system processor and all
internal operations of the device. An internal Write State Machine (WSM) automatically
executes the algorithms and timings necessary for block erase and program. A Status
Register indicates erase or program completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation. Each
erase operation erases one block. The Erase Suspend feature allows system software to
pause an erase cycle to read or program data in another block. Program Suspend
allows system software to pause programming to read other locations. Data is
programmed in word increments (x16).
The Numonyx™ StrataFlash
savings through Automatic Power Savings (APS) mode and standby mode. The device
automatically enters APS following read-cycle completion. Standby is initiated when the
system deselects the device by deasserting CE# or by asserting RST#. Combined,
these features can significantly reduce power consumption.
The device’s protection register allows unique flash device identification that can be
used to increase system security. Also, the individual Block Lock feature provides zero-
latency block locking and unlocking.
PPLK
.
®
Wireless Memory (L18 AD-Mux)
PP
connection provides complete data protection when V
PP
at 1.8 V or 9.0 V. Buffered Enhanced Factory Programming
®
®
Wireless Memory (L18) with AD-Multiplexed I/O device
Wireless Memory (L18 AD-Mux) device offers power
PP
CC
at 1.8 V, VCC and VPP can be tied
at 1.8 V, and erase and program
PP
is less than
Datasheet
9