S29GL-P_12 SPANSION [SPANSION], S29GL-P_12 Datasheet - Page 31
![no-image](/images/no-image-200.jpg)
S29GL-P_12
Manufacturer Part Number
S29GL-P_12
Description
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S29GL-P_12.pdf
(81 pages)
- Current page: 31 of 81
- Download datasheet (3Mb)
Notes
1. See
2. See DQ3: Sector Erase Timeout State Indicator
October 22, 2012 S29GL-P_00_A14
No
Table 12.1 on page 69
PASS. Device returns
to reading array.
DQ3 = 1?
Yes
Poll DQ3.
Yes
No
for erase command sequence.
Write Sector Erase Cycles:
Sector Address, Data 30h
Address 555h, Data AAh
Address 2AAh, Data 55h
Address 555h, Data AAh
Address 555h, Data 80h
Address 2AAh, Data 55h
Perform Write Operation
Write Unlock Cycles:
Sector Addresses
(see
Write Additional
Status Algorithm
Additional
DQ5 = 1?
Sectors?
Figure
Yes
Done?
Select
Yes
No
Yes
7.4)
on page 39
D a t a
FAIL. Write reset command
Last Sector
Selected?
to return to reading array.
S29GL-P MirrorBit
No
for information on the sector erase timeout.
No
S h e e t
Figure 7.3 Sector Erase Operation
®
Flash Family
• Each additional cycle must be written within t
• The host system may monitor DQ3 or wait t
• No limit on number of sectors
• Commands other than Erase Suspend or selecting additional
Unlock Cycle 1
Unlock Cycle 2
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Error condition (Exceeded Timing Limits)
acceptance of erase commands
sectors for erasure during timeout reset device to reading array
data
SEA
SEA
to ensure
timeout
31
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