S29GL-P_12 SPANSION [SPANSION], S29GL-P_12 Datasheet - Page 4

• Manufacturer Part Number: S29GL-P_12
• Description: 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
• Manufacturer: SPANSION [SPANSION]

Performance Characteristics
4
Notes
1. Access times are dependent on V
2. Contact a sales representative for availability.
128 & 256 Mb
See
Regulated V
Full V
VersatileIO V
Density
512 Mb
1 Gb
Ordering Information
CC
: V
CC
CC
IO
= V
: V
: V
Voltage Range
IO
CC
IO
Regulated V
VersatileIO V
Regulated V
VersatileIO V
Regulated V
VersatileIO V
= 2.7–3.6 V.
= 1.65–V
= 3.0–3.6 V.
Full V
Full V
Full V
page for further details.
Random Access Read (f = 5 MHz)
8-Word Page Read (f = 10 MHz)
Program/Erase
Standby
Single Word Programming
Effective Write Buffer Programming (V
Effective Write Buffer Programming (V
Sector Erase Time (64 Kword Sector)
CC
CC
CC
CC
CC
CC
CC
IO
IO
IO
, V
(1)
CC
S29GL-P MirrorBit
CC
and V
= 2.7–3.6 V.
Random Access
IO
Time (t
Program & Erase Times (typical values)
operating ranges.
Current Consumption (typical values)
100/110
Maximum Read Access Times (ns)
110
100
110
120
110
120
130
90
ACC
D a t a
)
®
Flash Family
Page Access Time
CC
HH
S h e e t
) Per Word
) Per Word
(t
PACC
25
25
25
)
CE# Access Time
S29GL-P_00_A14 October 22, 2012
13.5 µs
100/110
30 mA
50 mA
60 µs
15 µs
1 mA
0.5 s
1 µA
(t
110
100
110
120
110
120
130
90
CE
)
OE# Access Time
(t
25
25
25
OE
)