S29GL032N SPANSION [SPANSION], S29GL032N Datasheet - Page 18

• Manufacturer Part Number: S29GL032N
• Description: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
• Manufacturer: SPANSION [SPANSION]

8.3
18
8.2.1
8.3.1
8.3.2
8.3.3
Writing Commands/Command Sequences
Page Mode Read
Write Buffer
Accelerated Program Operation
Autoselect Functions
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)–A3.
Address bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word within a page. This is
an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to t
locations specified by the microprocessor falls within that page) is equivalent to t
deasserted and reasserted for a subsequent access, the access time is t
accesses are obtained by keeping the read-page addresses constant and changing the intra-read page
addresses.
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to V
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The
Program Command Sequence on page 42
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables
address space that each sector occupies.
Refer to the DC Characteristics table for the active current specification for the write mode. The AC
Characteristics section contains timing specification tables and timing diagrams for write operations.
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming time than the standard programming algorithms.
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts V
mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the
time required for program operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing V
number, returns the device to normal operation. Note that the WP#/ACC or ACC pin must not be at V
operations other than accelerated programming, or device damage may result. WP# contains an internal
pullup; when unconnected, WP# is at V
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–
DQ0. Standard read cycle timings apply in this mode. Refer to
Command Sequence on page 42
HH
on this pin, the device automatically enters the aforementioned Unlock Bypass
S29GL-N MirrorBit
for more information.
IH
.
contains details on programming data to the device using both
D a t a
ACC
®
Flash Family
or t
HH
CE
from the WP#/ACC or ACC pin, depending on model
S h e e t
and subsequent page read accesses (as long as the
IL
Autoselect Mode on page 29
, and OE# to V
ACC
S29GL-N_01_09 November 16, 2007
or t
IH
PACC
CE
.
. Fast page mode
. When CE# is
8.2
–
and
8.8
Word
indicate the
Autoselect
HH
for