S29GL032N SPANSION [SPANSION], S29GL032N Datasheet - Page 56

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S29GL032N

Manufacturer Part Number
S29GL032N
Description
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
Manufacturer
SPANSION [SPANSION]
Datasheet

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10.12 RY/BY#: Ready/Busy#
56
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode.
erased. During chip erase, a valid address is any non-protected sector address.
CC
.
S29GL-N MirrorBit
No
Table 10.5 on page 60
Figure 10.5 Data# Polling Algorithm
Read DQ15–DQ0
Read DQ15–DQ0
DQ7 = Data?
DQ7 = Data?
Addr = VA
Addr = VA
DQ5 = 1?
START
FAIL
D a t a
®
No
Yes
No
Flash Family
shows the outputs for RY/BY#.
S h e e t
Yes
Yes
PASS
S29GL-N_01_09 November 16, 2007

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