MT48LC16M4A2 Micron Technology, MT48LC16M4A2 Datasheet - Page 32

• Manufacturer Part Number: MT48LC16M4A2
• Description: SYNCHRONOUS DRAM
• Manufacturer: Micron Technology

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs, NC or I/O Pins
Operating Temperature,
Operating Temperature,
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35); V
I
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) ; V
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V
Output Levels:
Output High Voltage (I
Output Low Voltage (I
P A R A M E T E R / C O N D I T I O N
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
Standby Current: Power-Down Mode; All banks idle;
CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
Auto Refresh Current:
CKE = HIGH; CS# = HIGH
Self Refresh Current:
CKE
DD
Relative to V
Relative to V
T
T
A
A
SPECIFICATIONS AND CONDITIONS
(commercial) ...................................... 0°C to +70°C
(extended; IT parts) ...................... -40°C to +85°C
0.2V
DD
, V
SS
SS
V
DD
............................................ -1V to +4.6V
............................................ -1V to +4.6V
IN
Q Supply
V
OUT
DD
OUT
= 4mA)
= -4mA)
t
RC >=
t
RC (MIN)
t
t
Standard
Low power (L)
RFC =
RFC = 15.625µs
DD
, V
t
DD
RFC (MIN)
t
Q = +3.3V ±0.3V
V
RCD met;
OUT
DD
, V
32
V
DD
DD
Q = +3.3V ±0.3V
SYMBOL
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Q
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
V
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
150
180
250
V
0.5
V
60
V
- 6
, V
V
I
2
3
1
OZ
I
OH
OL
IH
I
IL
DD
Q
- 7 E
125
150
230
0.5
45
2
3
1
MAX
MIN
-0.3
2.4
-5
-5
3
2
–
64Mb: x4, x8, x16
- 7 5
115
140
210
0.5
45
2
3
1
V
DD
MAX
- 8 E
120
190
3.6
0.8
0.5
0.4
95
35
5
5
–
2
3
1
+ 0.3
U N I T S N O T E S
UNITS NOTES
©2003, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
SDRAM
µA
µA
V
V
V
V
V
18, 19,
19, 32
19, 32
19, 32
32, 33
3, 18,
3, 12,
3, 18,
3, 12,
32
22
22
4