MT48LC16M4A2 Micron Technology, MT48LC16M4A2 Datasheet - Page 49

• Manufacturer Part Number: MT48LC16M4A2
• Description: SYNCHRONOUS DRAM
• Manufacturer: Micron Technology

TIMING PARAMETERS
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4.
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
DQML, DQMH
SYMBOL* MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
t
t
t
t
t
t
t
t
AH
AS
CH
CL
CK(3)
CK(2)
CKH
CKS
CMH
COMMAND
A0-A9, A11
BA0, BA1
DQM /
CLK
CKE
A10
DQ
2. x16: A8, A9 and A11 = “Don’t Care”
t CMS
t CKS
1.5
2.5
2.5
1.5
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t AS
t AS
t AS
1
6
–
1
1
ACTIVE
T0
ROW
ROW
BANK
-6
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
t CK
7
-7E
T1
NOP
ENABLE AUTO PRECHARGE
t CMS
t CL
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
10
t DS
COLUMN m 2
-75
WRITE
T2
BANK
D
IN
WRITE – WITH AUTO PRECHARGE
t CMH
t CH
t DH
m
10
1
2
3
3
8
1
2
1
t DS
D
-8E
IN
T3
NOP
m + 1
t DH
ns
ns
ns
ns
ns
ns
ns
ns
ns
t DS
D
IN
T4
NOP
m + 2
t DH
49
SYMBOL* MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
t
t
t
t
t
t
t
t DS
CMS
DH
DS
RAS
RC
RCD
RP
WR
D
IN
T5
NOP
m + 3
t DH
t WR
1 CLK
+ 6ns
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.5
1.5
42 120,000
60
18
18
1
T6
NOP
-6
1
1 CLK
+ 7ns
1.5
0.8
1.5
37 120,000
60
15
15
-7E
T7
NOP
64Mb: x4, x8, x16
+ 7.5ns
1 CLK
1.5
0.8
1.5
44
66
20
20
-75
t RP
T8
NOP
120,000
1 CLK
+ 7ns
©2003, Micron Technology, Inc.
DON’T CARE
SDRAM
50 120,000
70
20
20
2
1
2
-8E
ACTIVE
ROW
ROW
BANK
T9
ns
ns
ns
ns
ns
ns
ns
–