S29PL032J SPANSION [SPANSION], S29PL032J Datasheet - Page 7

• Manufacturer Part Number: S29PL032J
• Description: CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
• Manufacturer: SPANSION [SPANSION]

April 7, 2005 31107A62
Page Mode Features
Standard Flash Memory Features
The page size is 8 words. After initial page access is accomplished, the page mode
operation provides fast read access speed of random locations within that page.
The device requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both
read and write functions. Internally generated and regulated voltages are pro-
vided for the program and erase operations.
The device is entirely command set compatible with the JEDEC 42.4 sin-
gle-power-supply Flash standard. Commands are written to the command
register using standard microprocessor write timing. Register contents serve as
inputs to an internal state-machine that controls the erase and programming cir-
cuitry. Write cycles also internally latch addresses and data needed for the
programming and erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The
Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four. Device erasure occurs by executing
the erase command sequence.
The host system can detect whether a program or erase operation is complete by
reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready to read array data or ac-
cept another command.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low V
ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on
hold for any period of time to read data from, or program data to, any sector that
is not selected for erasure. True background erase can thus be achieved. If a read
is needed from the SecSi Sector area (One Time Program area) after an erase
suspend, then the user must use the proper command sequence to enter and exit
this region.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consumption
is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
P R E L I M I N A R Y
S29PL127J/S29PL129J/S29PL064J/S29PL032J
CC
detector that automat-
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