CY7C1081DV33-12BAXI CYPRESS [Cypress Semiconductor], CY7C1081DV33-12BAXI Datasheet - Page 4

• Manufacturer Part Number: CY7C1081DV33-12BAXI
• Description: 64-Mbit (4 M x 16) Static RAM 2.0-V data retention
• Manufacturer: CYPRESS [Cypress Semiconductor]

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ..................................... –65 C to +150 C
Ambient temperature with
power applied ................................................ –55 C to +125 C
Supply voltage on V
DC voltage applied to outputs
in high-Z state
DC input voltage
DC Electrical Characteristics
Over the Operating Range
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Note
Document #: 001-53992 Rev. *C
V
V
V
V
I
I
I
I
I
C
C


Parameter
1. V
IX
OZ
CC
SB1
SB2
Parameter
Parameter
OH
OL
IH
IL
IN
OUT
JA
JC
IL
(min) = –2.0 V and V
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
Automatic CE power-down
current – TTL inputs
Automatic CE power-down
current – CMOS inputs
Input capacitance
I/O capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
[1]
CC
........................................–0.5 V to V
[1]
operating supply current
....................................–0.5 V to V
CC
Description
IH
relative to GND
(max) = V
Description
Description
CC
[1]
+ 2 V for pulse durations of less than 20 ns.
[1]
........ –0.5 V to +4.6 V
V
V
GND < V
GND < V
V
Max V
V
Max V
V
CC
CC
CC
IN
IN
T
Still air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
> V
> V
A
= Min, I
= Min, I
= Max, f = f
= 25 C, f = 1 MHz, V
CC
CC
IH
CC
CC
CC
, CE
, CE
IN
OUT
or V
– 0.3 V, or V
+ 0.5 V
+ 0.5 V
< V
OH
OL
1
1
< V
IN
CC
> V
> V
= 8.0 mA
= –4.0 mA
max
< V
CC
IH
CC
Test Conditions
, Output Disabled
IL
Test Conditions
Test Conditions
= 1/t
, CE
, f = f
– 0.3 V, CE
Current into outputs (LOW) ..............................................20 mA
Static discharge voltage.................................................>2001 V
(MIL-STD-883, Method 3015)
Latch up current ...........................................................>140 mA
Operating Range
IN
RC,
2
CC
< 0.3 V, f = 0,
Industrial
< V
max
Range
= 3.3 V
I
OUT
IL
,
2
= 0 mA CMOS levels
< 0.3 V,
–40 °C to +85 °C
Temperature
Ambient
–0.3
Min
CY7C1081DV33
2.4
2.0
FBGA
–1
–1
23.04
–
–
–
–
Max
32
40
55
3.3 V  0.3 V
–12
V
V
CC
CC
Max
300
120
100
0.4
0.8
+1
+1
–
+ 0.3
Page 4 of 13
C/W
C/W
Unit
Unit
pF
pF
Speed
12 ns
Unit
mA
mA
mA
A
A
V
V
V
V
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