MC68HC908LJ12CPB FREESCALE [Freescale Semiconductor, Inc], MC68HC908LJ12CPB Datasheet - Page 62

• Manufacturer Part Number: MC68HC908LJ12CPB
• Description: 8-bit microcontroller units
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

4.4 FLASH Control Register
MC68HC908LJ12
Freescale Semiconductor
—
Rev. 2.1
Address:
The FLASH control register (FLCR) controls FLASH program and erase
operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Reset:
Read:
Write:
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Block Erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
$FE08
Bit 7
0
0
Figure 4-2. FLASH Control Register (FLCR)
FLASH Memory (FLASH)
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
FLASH Memory (FLASH)
2
0
ERASE
1
0
Technical Data
PGM
Bit 0
0
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