MC68HC908QY2 MOTOROLA [Motorola, Inc], MC68HC908QY2 Datasheet - Page 48

• Manufacturer Part Number: MC68HC908QY2
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

FLASH Memory (FLASH)
4.5 FLASH Page Erase Operation
48
MC68HC908QY4•MC68HC908QT4•MC68HC908QY2•MC68HC908QT2•MC68HC908QY1•MC68HC908QT1
NOTE:
Use the following procedure to erase a page of FLASH memory. A page
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any FLASH memory page can be erased alone.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
In applications that need up to 10,000 program/erase cycles, use the
4 ms page erase specification to get improved long-term reliability. Any
application can use this 4 ms page erase specification. However, in
applications where a FLASH location will be erased and reprogrammed
less than 1000 times, and speed is important, use the 1 ms page erase
specification to get a lower minimum erase time.
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
register.
the block to be erased.
mode again.
FLASH Memory (FLASH)
rcv
(typical 1 s), the memory can be accessed in read
nvs
Erase
nvh
(minimum 10 s).
(minimum 5 s).
(minimum 1 ms or 4 ms).
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