NAND04GW3B2AN1E STMICROELECTRONICS [STMicroelectronics], NAND04GW3B2AN1E Datasheet - Page 18

• Manufacturer Part Number: NAND04GW3B2AN1E
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Device operations
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6.1
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6.1.2
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Device operations
The following section gives the details of the device operations.
Read Memory Array
At Power-Up the device defaults to Read mode. To enter Read mode from another mode the
Read command must be issued, see
issued, subsequent consecutive Read commands only require the confirm command code
(30h).
Once a Read command is issued two types of operations are available: Random Read and
Page Read.
Random Read
Each time the Read command is issued the first read is Random Read.
Page Read
After the first Random Read access, the page data (2112 Bytes) are transferred to the Page
Buffer in a time of t
Ready/Busy signal goes High. The data can then be read out sequentially (from selected
column address to last column address) by pulsing the Read Enable signal.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during Cache Read operations.
WHBH
(refer to
Table 21
Table 7:
for value). Once the transfer is complete the
Commands. Once a Read command is
NAND04GW3B2B, NAND08GW3B2A