NAND04GW3B2AN1E STMICROELECTRONICS [STMicroelectronics], NAND04GW3B2AN1E Datasheet - Page 40

• Manufacturer Part Number: NAND04GW3B2AN1E
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Program and Erase times and endurance cycles
9
40/58
Program and Erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in
Table 15.
Page Program Time
Block Erase Time
Program/Erase Cycles (per block)
Data Retention
Table
Program, Erase Times and Program Erase Endurance Cycles
Parameters
15.
100,000
Min
10
NAND04GW3B2B, NAND08GW3B2A
NAND Flash
Typ
200
2
Max
700
3
cycles
years
Unit
ms
µs