NAND04GW3B2AN1E STMICROELECTRONICS [STMicroelectronics], NAND04GW3B2AN1E Datasheet - Page 51

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NAND04GW3B2AN1E

Manufacturer Part Number
NAND04GW3B2AN1E
Description
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
NAND04GW3B2B, NAND08GW3B2A
Figure 29. Block Erase AC Waveform
Figure 30. Reset AC Waveform
RB
I/O
AL
CL
W
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
D0h
Code
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
DC and AC parameters
SR0
ai08043
ai08038c
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