M58LT256JSB8ZA6 STMICROELECTRONICS [STMicroelectronics], M58LT256JSB8ZA6 Datasheet - Page 54

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M58LT256JSB8ZA6

Manufacturer Part Number
M58LT256JSB8ZA6
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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DC and ac parameters
54/106
Table 20.
1. Sampled only, not 100% tested.
2. V
Symbol
I
I
I
DD6
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
(2)
I
LO
LI
DD
(1),
(1)
(1)
(1)
(1)
dual operation current is the sum of read and Program or Erase currents.
Input Leakage current
Output Leakage current
Supply current
Asynchronous Read (f=5 MHz)
Supply current
Synchronous Read (f=52 MHz)
Supply current (Reset)
Supply current (Standby)
Supply current (automatic
standby)
Supply current (Program)
Supply current (Erase)
Supply current
(dual operations)
Supply current Program/ Erase
Suspended (standby)
V
V
V
V
PP
PP
PP
PP
DC characteristics - currents
supply current (Program)
supply current (Erase)
supply current (Read)
supply current (Standby)
Parameter
Synchronous Read (Continuous
Asynchronous Read in another
Program/Erase in one Bank,
Program/Erase in one Bank,
f=52 MHz) in another Bank
0 V ≤ V
RP = V
0 V ≤ V
E = V
E = V
E = V
E = V
Test condition
V
V
V
V
Continuous
V
V
V
V
V
V
PP
PP
PP
PP
16 word
K = V
K = V
PP
PP
PP
PP
PP
PP
4 word
8 word
Bank
IL
DD
IL
DD
OUT
SS
= V
= V
= V
= V
IN
, G = V
, G = V
= V
= V
= V
= V
≤ V
≤ V
± 0.2 V
± 0.2 V
≤ V
± 0.2 V
SS
SS
PPH
PPH
PPH
PPH
≤ V
DD
DD
DD
DD
DD
DD
DDQ
DDQ
IH
IH
M58LT256JST, M58LT256JSB
Typ
0.2
0.2
0.2
0.2
13
16
18
22
23
50
50
50
35
35
35
35
48
58
50
8
8
Max
110
110
110
110
±1
±1
15
19
20
25
27
50
50
50
50
65
77
22
22
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA

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