HYI39S512160AE-7.5 QIMONDA [Qimonda AG], HYI39S512160AE-7.5 Datasheet - Page 13

• Manufacturer Part Number: HYI39S512160AE-7.5
• Description: 512-Mbit Synchronous DRAM
• Manufacturer: QIMONDA [Qimonda AG]

1) All voltages are referenced to
2)
1)
2) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
Rev. 1.52, 2007-06
03292006-6Y91-0T2Z
Parameter
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input (0 V <
Output leakage current (DQs are disabled, 0 V <
Parameter
Input Capacitances: CK
Input Capacitance
(A0-A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
V
Pulse width measured at 50% points with amplitude measured peak to DC reference.
V
IH
DD
may overshoot to
,
V
DDQ
= 3.3 V ± 0.3 V, f = 1 MHz,
I
I
OUT
OUT
V
DDQ
= 4.0 mA)
= – 4.0 mA)
+ 2.0 V for pulse width of < 4ns with 3.3 V.
V
SS
T
A
V
see
IN
<
Table 7
V
DD
, all other inputs = 0 V)
V
OUT
<
V
DDQ
13
)
V
IL
may undershoot to -2.0 V for pulse width < 4.0 ns with 3.3 V.
Symbol
V
V
V
V
V
V
I
I
IL
OL
DD
DDQ
IH
IL
OH
OL
Symbol
C
C
C
I1
I2
I0
Min. Max.
3.0
3.0
2.0
–0.3 +0.8
2.4
—
–5
–5
Input and Output Capacitances
Values
HY[I/B]39S512[40/80/16]0A[E/T]
3.6
3.6
V
—
0.4
+5
+5
Values
Min.
2.5
2.5
4.0
DDQ
512-Mbit Synchronous DRAM
+ 0.3 V
Max.
3.5
3.8
6.0
DC Characteristics
Unit Note/
V
V
V
V
V
µA
µA
Internet Data Sheet
Test Condition
1)
1)
1)2)
1)2)
1)
1)
—
—
Unit
pF
pF
pF
TABLE 8
TABLE 9
Note
1)2)
1)2)
1)2)