HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet - Page 10

• Manufacturer Part Number: HYB3165165TL-50
• Description: 4M x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
Output buffer turn-off delay
Output buffer turn-off delay from OE
Data to CAS low delay
Data to OE low delay
CAS high to data delay
OE high to data delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Read-modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
CAS precharge time
Access time from CAS precharge
Output data hold time
RAS pulse width in hyper page mode
CAS precharge to RAS Delay
Semiconductor Group
A
= 0 to 70 ˚C,
V
CC
= 3.3 V
(cont’d)
0.3V , t
5)6)
T
= 2 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
OFF
OEZ
DZC
DZO
CDD
ODD
WCH
WP
WCS
RWL
CWL
DS
DH
RWC
RWD
CWD
AWD
OEH
HPC
CP
CPA
COH
RAS
RHCP
40
min.
0
0
0
0
13
13
8
7
0
8
8
0
7
111
67
30
42
7
20
8
–
5
50
27
-50
max.
13
13
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
27
–
200k
–
Limit Values
HYB3164(5)165T(L)-50/-60
min.
0
0
0
0
15
15
10
10
0
10
10
0
10
135
79
34
49
10
25
10
–
5
60
35
4M x 16 EDO-DRAM
-60
max.
15
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
35
–
200k
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
12
12
13
13
14
14
15
16
16
15
15
15
7