HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet - Page 7

• Manufacturer Part Number: HYB3165165TL-50
• Description: 4M x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
Average Vcc supply current:
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
Semiconductor Group
A
= 0 to 70 ˚C,
V
SS
= 0 V,
V
CC
= 3.3 V
-50 ns version
-60 ns version
0.3 V, (values in brackets for HYB 3165165J/T)
37
Symbol
V
V
V
V
V
V
I
I
I
I
I(L)
O(L)
CC1
CC2
IH
IL
OH
OL
OH
OL
min.
2.0
– 0.3
2.4
–
Vcc-0.2 -
-
– 2
– 2
–
–
–
HYB3164(5)165T(L)-50/-60
Limit Values
max.
Vcc+0.3
0.8
–
0.4
0.2
2
2
110 (140)
100 (120)
2
4M x 16 EDO-DRAM
Unit Note
V
V
V
V
V
V
mA
mA
mA
A
A
1)
1)
2) 3) 4)
–