HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet - Page 8

• Manufacturer Part Number: HYB3165165TL-50
• Description: 4M x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

DC Characteristics
T
Parameter
Average Vcc supply current, during RAS-only
refresh cycles:
(RAS cycling: CAS = VIH: tRC = tRC min.)
Average Vcc supply current,
Hyper page mode (EDO):
(RAS = V
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
Average Vcc supply current, during CAS-before-
RAS refresh mode:
(RAS, CAS cycling: tRC = tRC min.)
Self Refresh Current (L-version only)
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
Capacitance
T
Parameter
Input capacitance (A0 to A11,A12)
Input capacitance (RAS, CAS, WRITE, OE)
I/O capacitance (I/O1-I/O16)
Semiconductor Group
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
A
A
= 0 to 70 ˚C,
= 0 to 70 ˚C,
IL
, CAS, address cycling: tHPC=tHPC min.)
V
V
CC
SS
= 3.3 V
= 0 V,
(cont’d)
V
CC
0.3 V,
= 3.3 V
-50 ns version
-50 ns version
-60 ns version
-50 ns version
-60 ns version
f
-60 ns version
= 1 MHz
0.3 V, (values in brackets for HYB 3165165J/T)
38
Symbol
I
I
I
I
I
Symbol
C
C
C
CC3
CC4
CC5
CC6
CC7
I1
I2
IO
min.
–
–
–
–
–
–
–
–
min.
–
–
–
HYB3164(5)165T(L)-50/-60
Limit Values
Limit Values
max.
110 (140)
100 (120)
115 (150)
100 (120)
200
110 (140)
100 (120)
400
4M x 16 EDO-DRAM
max.
5
7
7
Unit Note
mA
mA
mA
mA
mA
mA
A
A
Unit
pF
pF
pF
2) 4)
2) 3) 4)
–
2) 4)