HYB3165165TL-50 SIEMENS [Siemens Semiconductor Group], HYB3165165TL-50 Datasheet - Page 4

• Manufacturer Part Number: HYB3165165TL-50
• Description: 4M x 16-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

TRUTH TABLE
Standby
Read:Word
Read:Lower Byte
Read:Upper Byte
Write:Word
(Early-Write)
Write:Lower Byte
(Early-Write)
Write:Upper Byte
(Early Write)
Read-Modify-
Write
Hyper Page Mode
Read (Word)
Hyper Page Mode
Read (Word)
Hyper Page Mode
Early Write(Word)
Hyper Page Mode
Early Write(Word)
Hyper Page Mode
RMW
Hyper Page Mode
RMW
RAS only refresh
CAS-before-RAS
refresh
Test Mode Entry
Hidden Refresh
(Read)
Hidden Refresh
(Write)
Self Refresh
(L-version only)
Semiconductor Group
FUNCTION
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
2nd
2nd
1st
1st
1st
2st
RAS LCAS UCA
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H - L L
H - L L
L-H-
L
L-H-
L
H-L
H - X
L
L
H
L
L
H
L
H - L
H - L
H - L
H - L
H - L
H - L
H
L
L
L
S
H - X
H
H
L
L
H
L
L
H - L
H - L
H - L
H - L
H - L
H - L
H
L
L
L
L
H
WRIT
E
X
H
H
H
L
L
L
H - L
H
H
L
L
H - L
H - L
X
H
L
H
L
X
34
OE
X
L
L
L
X
X
X
L - H ROW
L
L
X
X
L - H ROW
L - H n/a
X
X
X
L
X
X
ROW
ADD
X
ROW
ROW
ROW
ROW
ROW
ROW
ROW
n/a
ROW
n/a
ROW
X
X
ROW
ROW
X
HYB3164(5)165T(L)-50/-60
COL
ADD
X
COL
COL
COL
COL
COL
COL
COL
COL
COL
COL
COL
COL
COL
n/a
n/a
n/a
COL
COL
X
4M x 16 EDO-DRAM
I/O1-
I/O16
High Impedance
Data Out
Lower Byte:Data Out
Upper-Byte:High-Z
Lower Byte:High-Z
Upper Byte:Data Out
Data In
Lower Byte:Data Out
Upper-Byte:High-Z
Lower Byte:High-Z
Upper Byte:Data Out
Data Out, Data In
Data Out
Data Out
Data In
Data In
Data Out, Data In
Data Out, Data In
High Impedance
High Impedance
High Impedance
Data Out
Data In
High Impedance