M58WR032FB60ZB6 STMICROELECTRONICS [STMicroelectronics], M58WR032FB60ZB6 Datasheet - Page 40

• Manufacturer Part Number: M58WR032FB60ZB6
• Description: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M58WR032FT, M58WR032FB
Table 18. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
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I
Symbol
I
DD6
I
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
LO
LI
2. V
(1,2)
(1)
(1)
(1)
(1)
DD
Input Leakage Current
Output Leakage Current
Supply Current
Asynchronous Read (f=6MHz)
Supply Current
Synchronous Read (f=54MHz)
Supply Current
Synchronous Read (f=66MHz)
Supply Current (Reset)
Supply Current (Standby)
Supply Current (Automatic Standby)
Supply Current (Program)
Supply Current (Erase)
Supply Current
(Dual Operations)
Supply Current Program/ Erase
Suspended (Standby)
V
V
V
V
Dual Operation current is the sum of read and program or erase currents.
PP
PP
PP
PP
Supply Current (Program)
Supply Current (Erase)
Supply Current (Read)
Supply Current (Standby)
Parameter
Program/Erase in one
Read in another Bank
Program/Erase in one
Read in another Bank
Bank, Asynchronous
Bank, Synchronous
0V
RP = V
0V
E = V
E = V
Test Condition
E = V
E = V
V
V
V
V
Continuous
Continuous
V
V
V
V
V
V
PP
PP
PP
PP
16 Word
16 Word
V
PP
PP
PP
PP
4 Word
8 Word
4 Word
8 Word
PP
PP
V
OUT
IL
IL
DD
DD
IN
= V
= V
= V
= V
SS
, G = V
, G = V
= V
= V
= V
= V
± 0.2V
± 0.2V
V
V
± 0.2V
PPH
PPH
PPH
PPH
DD
DD
DD
DD
DD
DD
V
V
DDQ
DDQ
IH
IH
Min
Typ
0.2
0.2
0.2
0.2
10
12
13
14
16
10
10
10
10
10
13
23
10
11
3
7
8
8
8
2
2
Max
±1
±1
16
18
22
25
17
20
25
30
50
50
50
15
20
15
20
26
45
50
6
5
5
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA