M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 32
![no-image](/images/no-image-200.jpg)
M36DR432BD
Manufacturer Part Number
M36DR432BD
Description
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
Manufacturer
ST Microelectronics
Datasheet
1.M36DR432BD.pdf
(52 pages)
- Current page: 32 of 52
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M36DR432AD, M36DR432BD
Figure 10. Flash Write AC Waveforms, Write Enable Controlled
Note: Addresses are latched on the falling edge of WF, Data is latched on the rising edge of WF.
Table 19. Flash Write AC Characteristics, Write Enable Controlled
Note: 1. To be characterized.
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Symbol
t
t
t
t
t
t
t
t
t
t
t
t
VDHEL
PLQ7V
t
WLWH
DVWH
WHDX
WHEH
WHWL
GHWL
WHGL
WLAX
AVWL
ELWL
AVAV
A0-A20
EF
GF
WF
DQ0-DQ15
V DDF
t
t
t
t
WPH
t
Alt
t
t
t
t
t
t
VCS
OEH
WC
WP
DH
CH
CS
DS
AS
AH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
V
Write Enable High to Output Enable Low
RPF Low to Reset Complete During
Program/Erase
DD
High to Chip Enable Low
tVDHEL
Parameter
tELWL
tGHWL
tAVWL
tAVAV
VALID
tWLWH
85
50
40
Min
30
50
50
30
0
0
0
0
0
tDVWH
(1)
(1)
(1)
85
VALID
Max
M36DR432AD, M36DR432BD
15
tWLAX
Min
100
50
50
30
50
50
30
0
0
0
0
0
100
tWHEH
tWHGL
Max
15
tWHWL
tWHDX
Min
120
50
50
30
50
50
30
0
0
0
0
0
120
Max
AI07314
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
µs
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