M36DR432BD ST Microelectronics, M36DR432BD Datasheet - Page 33

• Manufacturer Part Number: M36DR432BD
• Description: 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
• Manufacturer: ST Microelectronics

Figure 11. Flash Write AC Waveforms, Chip Enable Controlled
Note: Addresses are latched on the falling edge of EF, Data is latched on the rising edge of EF.
Table 20. Flash Write AC Characteristics, Chip Enable Controlled
Note: 1. To be characterized
Symbol
t
t
t
VDHWL
t
t
t
t
t
t
t
t
t
t
PLQ7V
EHWH
WLEL
DVEH
EHDX
GHEL
EHGL
ELEH
EHEL
ELAX
AVAV
AVEL
A0-A20
WF
GF
EF
DQ0-DQ15
V DDF
t
t
t
t
t
t
t
OEH
Alt
t
t
CPH
t
t
VCS
WC
WH
WS
CP
DS
DH
AH
AS
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
V
Chip Enable High to Output Enable Low
RPF Low to Reset Complete During
Program/Erase
DD
High to Write Enable Low
tVDHWL
tWLEL
tGHEL
Parameter
tAVEL
tAVAV
VALID
tELEH
85
50
40
tDVEH
Min
30
50
50
30
0
0
0
0
0
(1)
(1)
(1)
85
VALID
M36DR432AD, M36DR432BD
Max
15
tELAX
M36DR432AD, M36DR432BD
Min
100
50
50
30
50
50
30
0
0
0
0
0
tEHWH
100
tEHGL
Max
tEHEL
15
tEHDX
Min
120
50
50
30
50
50
30
0
0
0
0
0
120
Max
AI07315
15
Unit
33/52
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
µs