K4S161622D-TI/E10 Samsung semiconductor, K4S161622D-TI/E10 Datasheet - Page 18

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K4S161622D-TI/E10

Manufacturer Part Number
K4S161622D-TI/E10
Description
1M x 16 SDRAM
Manufacturer
Samsung semiconductor
Datasheet
K4S161622D-TI/E
CMOS SDRAM
5. Write Interrupted by Precharge & DQM
CLK
Note 3
PRE
WR
CMD
Note 2
DQM
DQ
D
D
D
D
0
1
2
3
Masked by DQM
*Note : 2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only the other bank precharge of dual banks operation.
Rev 1.2 Jan '03

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