K4S161622D-TI/E10 Samsung semiconductor, K4S161622D-TI/E10 Datasheet - Page 33

• Manufacturer Part Number: K4S161622D-TI/E10
• Description: 1M x 16 SDRAM
• Manufacturer: Samsung semiconductor

DQ
CLOCK
K4S161622D-TI/E
Read & Write Cycle at Different Bank @Burst Length=4
A
ADDR
10
DQM
CKE
RAS
CAS
WE
/AP
CS
BA
CL=2
CL=3
*Note :
0
Row Active
(A-Bank)
RAa
RAa
1
1. t
CDL
2
(A-Bank)
should be met to complete write.
CAa
Read
3
4
QAa0 QAa1 QAa2 QAa3
5
Row Active
(B-Bank)
QAa0 QAa1 QAa2 QAa3
RBb
RBb
6
Precharge
(A-Bank)
7
8
9
HIGH
10
11
(B-Bank)
Write
DBb0 DBb1 DBb2 DBb3
DBb0 DBb1 DBb2 DBb3
CBb
12
Row Active
(A-Bank)
RAc
RAc
13
14
15
tCDL
(A-Bank)
Read
CMOS SDRAM
CAc
Rev 1.1 Jun '01
16
*Note 1
17
QAc0 QAc1 QAc2
18
: Don't care
QAc0 QAc1
19