HYS64-74V8200GU Siemens, HYS64-74V8200GU Datasheet - Page 7

• Manufacturer Part Number: HYS64-74V8200GU
• Description: 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
• Manufacturer: Siemens

DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQ is disabled, 0 V <
Capacitance
T
Parameter
Input capacitance
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input capacitance (CS0 - CS3)
Input capacitance (CLK0 - CLK3)
Input capacitance (CKE0, CKE1)
Input capacitance (DQMB0 - DQMB7)
Input/Output capacitance
(DQ0 - DQ63, CB0 - CB7)
Input Capacitance (SCL, SA0 - 2)
Input/Output capacitance
Semiconductor Group
A
A
= 0 to 70 C;
= 0 to 70 C;
V
IN
< 3.6 V, all other inputs = 0 V)
V
V
SS
DD
I
= 0 V;
= 3.3 V
I
OUT
OUT
V
OUT
= 2.0 mA)
= – 2.0 mA)
V
DD
V
0.3 V,
,
CC
V
DDQ
)
f
= 3.3 V
= 1 MHz
Symbol
C
C
C
C
C
C
C
C
I1
I2
ICL
I3
I4
IO
SC
SD
0.3 V
7
max.
8M 64
45
25
35
35
13
10
8
10
HYS 64(72)V8200/16220GU-8/-10
Symbol
V
V
V
V
I
I
I(L)
O(L)
IH
IL
OH
OL
max.
8M 72
55
25
38
38
13
10
8
10
Limit Values
min.
2.0
– 0.5
2.4
–
– 40
– 40
max.
16M 64
70
25
35
35
20
15
8
10
Limit Values
SDRAM Modules
max.
V
0.8
–
0.4
40
40
max.
16M 72
80
30
38
38
20
15
8
10
CC
+ 0.3
1998-08-01
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Unit
V
V
V
V
A
A