MX29LV002NCBTC-70G Macronix International Co., MX29LV002NCBTC-70G Datasheet

MX29LV002NCBTC-70G

Manufacturer Part Number

MX29LV002NCBTC-70G

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29LV004CTTI-90G.pdf (67 pages)

2.MX29LV002NCBTC-70G.pdf (58 pages)

3.MX29LV002NCBTC-70G.pdf (58 pages)

Specifications of MX29LV002NCBTC-70G

Case

TSOP40

Date_code

2006+

Current page: 1 of 58
Download datasheet (513Kb)

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 262,411 x 8

• Single power supply operation

• Fast access time: 70/90ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

• Status Reply

GENERAL DESCRIPTION

The MX29LV002C T/B is a 2-mega bit Flash memory

organized as 256K bytes of 8 bits. MXIC's Flash memo-

ries offer the most cost-effective and reliable read/write

non-volatile random access memory. The MX29LV002C

T/B is packaged in 32-pin TSOP and 32-pin PLCC. It is

designed to be reprogrammed and erased in system or

in standard EPROM programmers.

The standard MX29LV002C T/B offers access time as

fast as 70ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV002C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV002C T/B uses a command register to manage

this functionality. The command register allows for 100%

P/N:PM1204

- 3.0V only operation for read, erase and program

operation

- 20mA maximum active current

- 0.2uA typical standby current

- Byte Programming (9us typical)

- Sector Erase (Sector structure 16K-Byte x 1,

8K-Byte x 2, 32K-Byte x1, and 64K-Byte x3)

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

- Data# Polling & Toggle bit for detection of program

and erase operation completion.

MX29LV002C/002NC T/B

2M-BIT [256K x 8] CMOS SINGLE VOLTAGE

• Ready/Busy# pin (RY/BY#)

• Sector protection

• CFI (Common Flash Interface) compliant

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

• Hardware RESET# pin (only for 29LV002C)

• Package type:

• 20 years data retention

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV002C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

- Provides a hardware method of detecting program or

erase operation completion.

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors

- Flash device parameters stored on the device and

provide the host system to access

- T = Top Boot Sector

- B = Bottom Boot Sector

- Resets internal state machine to read mode

- 32-pin TSOP (type 1)

- 32-pin PLCC

3V ONLY FLASH MEMORY

REV. 1.0, JUN. 30, 2005

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