MX29F200BTC-70 Macronix International Co., MX29F200BTC-70 Datasheet

MX29F200BTC-70

Manufacturer Part Number

MX29F200BTC-70

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29F200BTC-70.pdf (46 pages)

2.MX29F200BTC-70.pdf (46 pages)

3.MX29F200BTC-70.pdf (46 pages)

Specifications of MX29F200BTC-70

Case

TSOP48

Date_code

2006+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F200BTC-70

Manufacturer:

Quantity:

674

Company:

BOSTOCK HK LIMITED

Part Number:

MX29F200BTC-70

Manufacturer:

Quantity:

1 000

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FEATURES

• 5.0V±10% for read, erase and write operation

• 131072x16/262144x8 switchable

• Fast access time: 55/70/90/120ns

• Low power consumption

• Command register architecture

• Auto Erase (chip) and Auto Program

• Status Reply

• Ready/Busy pin(RY/BY)

• Compatibility with JEDEC standard

GENERAL DESCRIPTION

The MX29F200T/B is a 2-mega bit, single 5 Volt Flash

memory organized as 1M word x16 or 2M bytex8 MXIC's

Flash memories offer the most cost-effective and reli-

able read/write non-volatile random access memory.

The MX29F200T/B is packaged in 44-pin SOP and 48-

pin TSOP. It is designed to be reprogrammed and

erased in-system or in-standard EPROM programmers.

The standard MX29F200T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention, the

MX29F200T/B has separate chip enable (CE) and output

enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F200T/B uses a command register to manage this

functionality. The command register allows for 100%

P/N:PM0549

- 40mA maximum active current@5MHz

- 1uA typical standby current

- Byte/Word Programming (7us/12us typical)

- Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and

64K-Byte x3)

- Automatically erase any combination of sectors or

the whole chip with Erase Suspend capability.

- Automatically program and verify data at specified

address

- Data polling & Toggle bit for detection of program

and erase cycle completion.

- Provides a hardware method or detecting program

or erase cycle completion

- Pinout and software compatible with single-power

supply Flash

2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

• Sector protection

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

• Erase suspend/ Erase Resume

• Hardware RESET pin

• 20 years data retention

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields for

erase and programming operations produces reliable

cycling. The MX29F200T/B uses a 5.0V ± 10% VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

- Superior inadvertent write protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Sector protect/unprotect for 5V only system or 5V/

12V system

- T = Top Boot Sector

- B = Bottom Boot Sector

- 44-pin SOP

- 48-pin TSOP

- Suspends an erase operation to read data from, or

program data to a sector that is not being erased, then

resume the erase operation.

- Resets internal state mechine to the read mode

MX29F200T/B

REV. 1.3, DEC. 24, 2001

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