K4H510438A-TCA0 SAMSUNG [Samsung semiconductor], K4H510438A-TCA0 Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
K4H510438A-TCA0
Manufacturer Part Number
K4H510438A-TCA0
Description
128Mb DDR SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H510438A-TCA0.pdf
(53 pages)
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128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
Version 0.71 (April, 2000)
Version 0.72(May,2000)
Version 0.73(June,2000)
Version 1.0(November,2000)
- Changed DC spec item & test condition
- Deleted tDAL in AC parameter
- Eliminate "preliminary"
- Added updated DC spec values
- Added Overshoot/Undershoot spec
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
- Changed input cap. spec.
- Changed operating condition.
- Changed AC parameters as follows.
- Added DC spec values.
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
DQ/DQS/DM
. Vih(max) = 4.2V, the overshoot voltage duration is
. Vil(min) =- 1.5V, the overshoot voltage duration is
V
KM44L32031BT-G(L)Z/Y/0
KM48L16031BT-G(L)Z/Y/0
KM416L8031BT-G(L)Z/Y/0
CMD/Addr
Vil/Vih(ac)
IL
tDQSQ
CK/CK
/V
tQH
tDV
tHP
IH
(dc)
from
+/- 0.5(PC266), +/- 0.6(PC200)
Vref +/- 0.35V
Vref +/- 0.18V
4.0pF ~ 5.5pF
2.5pF ~ 3.5pF
2.5pF ~ 3.5pF
from
from
+/- 0.35tCK
from
-
-
K4H280438B-TC(L)A2/B0/A0
K4H280838B-TC(L)A2/B0/A0
K4H281638B-TC(L)A2/B0/A0
Vref +/- 0.31V
Vref +/- 0.15V
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
to
to
+0.5(PC266), +0.6(PC200)
3ns at VDD.
3ns at VSS.
tHPmin - 0.75ns(PC266)
tHPmin - 1.0ns(PC200)
tCLmin or tCHmin
- 3 -
to
to
-
REV. 1.0 November. 2. 2000
New Definition
New Definition
Comments
Removed
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