K4H510438A-TCA0 SAMSUNG [Samsung semiconductor], K4H510438A-TCA0 Datasheet - Page 43

• Manufacturer Part Number: K4H510438A-TCA0
• Description: 128Mb DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

128Mb DDR SDRAM
Note 1. Vih(max) = 4.2V. The overshoot voltage duration is
I
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
4. Timing patterns
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
8. AC Operating Conditions & Timming Specification
8.1 AC Operating Conditions
DD7
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with autoprecharge
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
changing. lout = 0mA
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst
4. The value of V
2. Vil(min) = -1.5V. The undershoot voltage duration is
3. VID is the magnitude of the difference between the input level on CK and the input on CK.
: Operating current: Four bank operation
Parameter/Condition
IX
is expected to equal 0.5*V
Table 13. AC operating conditions
DDQ
of the transmitting device and must track variations in the DC level of the same.
3ns at VDD.
- 43 -
3ns at VSS.
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
VREF + 0.31
0.62
0.5*VDDQ-0.2
REV. 1.0 November. 2. 2000
Min
0.5*VDDQ+0.2
VREF - 0.31
VDDQ+0.6
Max
Unit
V
V
V
V
Note
1
2
3
4