K4H510438A-TCA0 SAMSUNG [Samsung semiconductor], K4H510438A-TCA0 Datasheet - Page 46

• Manufacturer Part Number: K4H510438A-TCA0
• Description: 128Mb DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

128Mb DDR SDRAM
(V
Input reference voltage for Clock
Input signal maximum peak swing
Input signal minimum slew rate
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
9. AC Operating Test Conditions
10. Input/Output Capacitance
DD
(V
Input capacitance
(A
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
=2.5V, V
DD
0
~ A
=2.5, V
11
DDQ
, BA
IH
DDQ
/V
=2.5V, T
0
IL
~ BA
=2.5V, T
)
Parameter
Parameter
1,
A
CKE, CS, RAS,CAS, WE)
= 0 to 70 C)
A
Table 15. AC operating test conditions
= 25
Output
C
Figure 24. Output Load Circuit (SSTL_2)
, f=1MHz)
Table 16. Input/output capacitance
Z0=50
C
LOAD
- 46 -
=30pF
V
Symbol
C
tt
C
C
C
=0.5*V
OUT
IN1
IN2
IN3
V
REF
See Load Circuit
R
DDQ
T
+0.31/V
0.5 * V
=50
Value
V
V
=0.5*V
Min
4.0
4.0
1.5
1.0
V
REF
REF
2
2
tt
REV. 1.0 November. 2. 2000
DDQ
REF
DDQ
-0.31
Max
3.0
3.0
5.0
5.0
Delta Cap(max)
V/ns
Unit
0.25
V
V
V
V
V
0.5
0.5
Note
Unit
pF
pF
pF
pF