AM49PDL127AH61IS SPANSION [SPANSION], AM49PDL127AH61IS Datasheet - Page 74
AM49PDL127AH61IS
Manufacturer Part Number
AM49PDL127AH61IS
Description
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM49PDL127AH61IS.pdf
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FLASH AC CHARACTERISTICS
72
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
CE#f2 (PDL129 only)
Figure 25. Flash Alternate CE#f1 Controlled Write (Erase/Program) Operation Timings
Addresses
CE#f1 or
RESET#
RY/BY#
WE#
Data
OE#
t
RH
555 for program
2AA for erase
A D V A N C E
t
t
t
WS
WC
WH
Am49PDL127AH/Am49PDL129AH
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SADD for sector erase
555 for chip erase
CPH
t
AS
t
DH
t
AH
I N F O R M A T I O N
OUT
PD for program
30 for sector erase
10 for chip erase
is the data written to the device.
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
December 18, 2003
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