K9F1208B0C SAMSUNG [Samsung semiconductor], K9F1208B0C Datasheet - Page 13

• Manufacturer Part Number: K9F1208B0C
• Description: 64M x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208U0C
K9F1208R0C
AC CHARACTERISTICS FOR OPERATION
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device resetting time(Read/Program/Erase)
RE Pulse Width during Busy State
Read Cycle Time during Busy State
RE Access Time during Busy State
K9F1208X0C-P only
2. This parameter (
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
K9F1208B0C
t
RPB/
t
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)
RCB/
Parameter
t
REAB) must be used only for 1.8V device.
Parameter
13
(4)
Symbol
t
t
t
REAB
t
RPB
RCB
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
CSD
t
REH
CLR
REA
CEA
RHZ
CHZ
RST
t
WB
OH
t
AR
RR
RP
RC
IR
R
(2)
(2)
(2)
Symbol
t
t
t
CRY
CEH
RB
Min
10
10
20
21
42
10
15
15
60
35
50
0
-
-
-
-
-
-
-
-
Min
100
FLASH MEMORY
-
-
5/10/500
Max
100
Max
100
15
30
35
30
20
40
-
-
-
-
-
-
-
-
-
-
-
-
5
-
(1)
Unit
Uni
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
µs
ns
ns